InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs

Applied Physics Letters - Tập 74 Số 5 - Trang 729-731 - 1999
S. R. Kurtz1, Andrew A. Allerman1, E. D. Jones1, J.M. Gee1, J.J. Banas1, B. E. Hammons1
1Sandia National Laboratories, Albuquerque, New Mexico 87185-0603

Tóm tắt

The design, growth by metalorganic chemical vapor deposition, and processing of an In0.07Ga0.93As0.98N0.02 solar cell, with 1.0 eV band gap, lattice matched to GaAs is described. The hole diffusion length in annealed, n-type InGaAsN is 0.6–0.8 μm, and solar cell internal quantum efficiencies >70% are obtained. Optical studies indicate that defects or impurities, from InGaAsN doping and nitrogen incorporation, limit solar cell performance.

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Tài liệu tham khảo

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Thông tin xuất bản

Applied Physics Letters

Tập 74 Số 5

729-731

Thông tin tác giả