In-plane aligned YBa2Cu3O7−x thin films deposited on polycrystalline metallic substrates

Applied Physics Letters - Tập 60 Số 6 - Trang 769-771 - 1992
Y. Iijima1, Nari Tanabe1, O. Kohno1, Y. Ikeno1
1Materials Research Lab., Fujikura Ltd., 1-5-1, Kiba, Koto-ku, Tokyo 135, Japan

Tóm tắt

C-axis oriented YBa2Cu3O7−x thin films are conventionally obtained on polycrystalline substrates, but a- and b-axes are randomly distributed. Due to the weak links at the high-angle grain boundaries in the a–b plane, the critical current density (Jc) are comparatively low, from 103 to 104 A/cm2 (77 K, 0 T), and the Jc decreases in magnetic field in a manner similar to bulk YBa2Cu3 O7−x samples. To reduce weak links at the high-angle grain boundaries, biaxially oriented buffer layers of yttrium stabilized zirconia (YSZ) were formed on polycrystalline, Ni-based alloy by ion-beam assisted deposition (IBAD), and subsequently the a–b plane aligned YBa2Cu3 O7−x film was deposited by laser ablation. Jc of 2.5×105 A/cm2 (77 K, 0 T) and 2.2×104 A/cm2 (77 K, 8.0 T) were obtained. A new method to prevent intergranular weak links has been developed for potential applications using practical polycrystalline substrates.  

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Thông tin xuất bản

Applied Physics Letters

Tập 60 Số 6

769-771

Thông tin tác giả