Improvement of the Electrical Properties of Cu-Poor CuInS2 Thin Films by Sodium Incorporation

Japanese Journal of Applied Physics - Tập 37 Số 11B - Trang L1370 - 1998
Takayuki Watanabe1, Hidenobu Nakazawa1, Masahiro Matsui1
1Central Laboratory, Asahi Chemical Industry Co., Ltd., 2-1 Samejima, Fuji, Shizuoka 416-0934, Japan

Tóm tắt

We investigated the effects of intentional sodium incorporation on the electrical conductivity of Cu-poor CuInS2 thin films. CuInS2 films were fabricated by sulfurization of In–S/Cu/Na2S/In precursors. Sodium incorporation resulted in a remarkable increase in the lateral conductivity and the cell efficiency of CuInS2-based solar cells. Photoluminescence measurements revealed that the enhancements were attributed to the annihilation of donor states, most likely In interstitials, by sodium incorporation.

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Japanese Journal of Applied Physics

Tập 37 Số 11B

L1370

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