A. Barnà1, A. Sulyok1, M. Menyhárd1
1Research Institute for Technical Physics of HAS, H‐1325 Budapest, PO Box 76, Hungary
Tóm tắt
AbstractIn the case of conventional Auger in‐depth profiling, the depth resolution increases with the thickness of the removed layer. It was demonstrated that by rotating the specimen, the depth resolution improves drastically in certain cases. Independently from this, A. Barna developed a phenomenological model to describe the change of surface topography developing due to ion sputtering. Based on his results, an Auger in‐depth profiling device has been built. The capability of the device was checked by measuring in‐depth profiles of NiCr multilayer structure. The depth resolution determined from the measured profile is roughly constant along the depth.
