Importance of lattice matching and surface arrangement for the helicon-wave-excited-plasma sputtering epitaxy of ZnO

Journal of Applied Physics - Tập 95 Số 12 - Trang 7856-7861 - 2004
Toshie Koyama1, Shigefusa F. Chichibu1
1Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

Tóm tắt

Importance of lattice matching and proper surface arrangement of the substrate was shown to obtain better epilayer qualities of ZnO grown by an epitaxy method, the helicon-wave-excited-plasma sputtering epitaxy. The a-axis-locked single-domain (0001) ZnO epitaxy was accomplished on the uniaxially nearly lattice-matched (112̄0) Al2O3 substrate. The epilayer had approximately 50-100-nm-diam atomically smooth two-dimensional terraces with 0.26-nm-high monolayer steps, and exhibited a predominant near-band-edge photoluminescence peak, whose full width at half maximum value was 107 meV at room temperature. The a-axis-locked epitaxy was also realized on a lattice-mismatched (0001) Al2O3 substrate, indicating the compatibility of oxide substrates. However, the ZnO epilayer grown on the (0001) AlN epitaxial template prepared on (0001) Al2O3 had an in-plane 12-fold multidomain structure, though the effective lattice-mismatch between [112̄0] ZnO and [112̄0] AlN is smaller than that between [112̄0] ZnO and [101̄0] Al2O3. Proper purification and polarity-control techniques for the AlN surface, and/or insertion of an appropriate buffer layer are required to form single-domain heterovalent ZnO/AlN interfaces.

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Journal of Applied Physics

Tập 95 Số 12

7856-7861

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