Impact of Total Ionizing Dose on the Electromagnetic Susceptibility of a Single Bipolar Transistor

IEEE Transactions on Nuclear Science - Tập 59 Số 4 - Trang 860-865 - 2012
Adrien Doridant1,2, Sylvie Jarrix1,2, Jérémy Raoult1,2, Blain Amable1,2, N. Chatry, P. Calvel3, Patrick Hoffmann4, L. Dusseau5
1IES - Institut d’Electronique et des Systèmes (860, rue Saint Priest, Bâtiment 5 - CC 05001 -34095 Montpellier Cedex 5 - France)
2RADIAC - Radiations et composants (France)
3TAS - Thales Alenia Space [Toulouse] (26 Avenue J.F. Champollion, F-31037 Toulouse - France)
4CEG - Centre d'étude de Gramat (Direction générale de l'armement - France)
5CSU - Centre Spatial Universitaire de Montpellier-Nîmes (Université de Montpellier, Bâtiment 21 - CC 06-001, Place Eugène Bataillon -34 095 Montpellier Cedex 5 - France)

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IEEE Transactions on Nuclear Science

Tập 59 Số 4

860-865

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