High quality MOSFETs fabrication with HfO/sub 2/ gate dielectric and tan gate electrode

60th DRC. Conference Digest Device Research Conference - Trang 193-194
Rino Choi1, K. Onishi1, Chang Scok Kang1, Renee Nieh1, S. Gopalan1, Hag-Ju Cho1, S. Krishnan1, J.C. Lee1
1Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas, Austin, Austin, TX, USA

Tóm tắt

MOSFETs with high gate dielectric such as HfOz, ZrOz and LazOl have been studied intensively. Among these materials, HfOz seems to be promising because of its compatibility with the polysilicon gate process and relatively superior scalability.

Từ khóa

#MOSFETs #Fabrication #Hafnium oxide #Dielectrics #Electrodes #Annealing #Interface states #Scattering #Temperature #Hydrogen

Tài liệu tham khảo

onishi, 2002, Symp VLSI Tech cho, 2001, IEDM Tech Dig, 459 10.1109/16.337449 onishi, 2001, IEDM Tech Dig, 659 choi, 2001, Symp VLSI Tech, 15
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60th DRC. Conference Digest Device Research Conference

193-194

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