High power 660 nm optically pumped semiconductor thin-disk lasers

N. Linder1, C. Karnutsch1, J. Luft1, M. Muller1, W. Schmid1, K. Streubel1, S.-S. Beyertt2, A. Giesen2, G.H. Dohler3
1OSRAM Opto Semiconductors, Regensburg, Germany
2Institut für Strahlwerkzeuge, Univ. Stuttgart, Stuttgart, Germany
3Institut für Technische Physik, Univ. Erlangen, Erlangen, Germany

Tóm tắt

Summary form only given. We have for the first time implemented an optically pumped semiconductor thin-disk laser (OPS-TDL) emitting at visible wavelengths around 660 nm. The gain element is based on the AlGaInP material system, grown lattice-matched on GaAs. The epitaxial structures consist of a resonant periodic gain structure with varying number of periods and stacks of 1 to 4 quantum wells per period.

Từ khóa

#Optical pumping #Laser excitation #Power lasers #Pump lasers #Semiconductor lasers #Stimulated emission #Periodic structures #Quantum well lasers #Optical materials #Semiconductor materials

Tài liệu tham khảo

kuznetsov, 1997, IEEE Photon Technol Lett, 9, 10.1109/68.605500 sandusky, 1996, IEEE Photon Technol Lett, 8, 10.1109/68.481101 giesen, 1994, Appl Phys B, 58, 10.1007/BF01081875