High performance 40-GHz bandpass filters on Si using proton implantation

60th DRC. Conference Digest Device Research Conference - Trang 69-70
K.T. Chan1, C.Y. Chen1, A. Chin1, J.C. Hsieh2,1, J. Liu1, T.S. Duh1, W.J. Lin1,3
1Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan
2United Microelectronics Corporation Limited, Hsinchu, Taiwan
3Institute of Nuclear Energy Research, Taoyuan, Taiwan

Tóm tắt

We report a very simple process to fabricate high performance filters on Si at 40 GHz using H/sup +/ implantation. The filter has only -3.4 dB loss at peak transmission of 40 GHz with a broad 9 GHz bandwidth, which are the best filter results on Si at mm-wave frequency. In sharp contrast, the filter on 1.5 /spl mu/m SiO/sub 2/ isolated Si has much worse transmission and reflection loss and failed for circuit application.

Từ khóa

#Band pass filters #Protons #Radio frequency #Propagation losses #Conductivity #Bandwidth #Circuits #Performance loss #Gallium arsenide #Reflection

Tài liệu tham khảo

wu, 2000, MTT-S Int Microwave Symp Dig, 241 chan, 2001, IEDM Tech Dig, 373
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60th DRC. Conference Digest Device Research Conference

69-70

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