High-operating temperature MWIR nBn HgCdTe detector grown by MOCVD

Opto-Electronics Review - 2013
M. Kopytko1, A. Kębłowski2, Waldemar Gawron1, P. Madejczyk1, Andrzej Kowalewski1, K. Jóźwikowski1
1Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland
2Vigo System S.A., 129/133 Poznańska St., 05-850, Ożarów Mazowiecki, Poland

Tóm tắt

AbstractThe paper reports on the first experimental results of the mid-wave infrared (MWIR) HgCdTe barrier detectors operated at near-room temperatures and fabricated using metal organic chemical vapor deposition (MOCVD). SIMS profiles let to compare projected and obtained structures and reveals interdiffusion processes between the layers. Undesirable iodine diffusion from cap to the barrier increase the valance band offset and is the key item in limiting the performance of HgCdTe nBn detector. However, MOCVD technology with a wide range of composition and donor/acceptor doping and without post grown annealing might be successfully adopted for barrier device architectures.

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Tài liệu tham khảo

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