High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus

Nature Communications - Tập 5 Số 1
Jingsi Qiao1, Xianghua Kong1, Zhi-Xin Hu1, Feng Yang1, Wei Ji1
1Department of Physics, Renmin University of China, Beijing 100872, China

Tóm tắt

Từ khóa


Tài liệu tham khảo

Katsnel'son, M. I. Carbon in Two Dimensions Cambridge University Press (2012).

Novoselov, K. S. et al. Two-dimensional gas of massless Dirac fermions in graphene. Nature 438, 197–200 (2005).

Geim, A. K. & Novoselov, K. S. The rise of graphene. Nat. Mater. 6, 183–191 (2007).

Hwang, E. & Das Sarma, S. Acoustic phonon scattering limited carrier mobility in two-dimensional extrinsic graphene. Phys. Rev. B 77, 115449 (2008).

Geim, A. K. & Grigorieva, I. V. Van der Waals heterostructures. Nature 499, 419–425 (2013).

Wang, Z. M. MoS2: Materials, Physics, and Devices Springer International Publishing (2014).

Wang, Q. H. et al. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotech. 7, 699–712 (2012).

Fivaz, R. & Mooser, E. Mobility of charge carriers in semiconducting layer structures. Phys. Rev. 163, 743–755 (1967).

Vogt, P. et al. Silicene: compelling experimental evidence for graphenelike two-dimensional silicon. Phy. Rev. Lett. 108, 155501 (2012).

Houssa, M. et al. Electronic properties of hydrogenated silicene and germanene. Appl. Phys. Lett. 98, 223107 (2011).

Bianco, E. et al. Stability and exfoliation of germanane: a germanium graphane analogue. ACS Nano 7, 4414–4421 (2013).

Berger, C. et al. Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics. J. Phys. Chem. B 108, 19912–19916 (2004).

Liao, L. et al. High-speed graphene transistors with a self-aligned nanowire gate. Nature 467, 305–308 (2010).

Schwierz, F. Graphene transistors. Nat. Nanotechnol. 5, 487–496 (2010).

Radisavljevic, B. et al. Single-layer MoS2 transistors. Nat. Nanotech. 6, 147–150 (2011).

Wang, H. et al. Integrated circuits based on bilayer MoS2 transistors. Nano Lett. 12, 4674–4680 (2012).

Yoon, Y., Ganapathi, K. & Salahuddin, S. How good can monolayer MoS2 transistors be? Nano Lett. 11, 3768–3773 (2011).

Popov, I., Seifert, G. & Tománek, D. Designing electrical contacts to MoS2 monolayers: a computational study. Phys. Rev. Lett. 108, 156802 (2012).

Xia, F., Farmer, D. B., Lin, Y. M. & Avouris, P. Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature. Nano Lett. 10, 715–718 (2010).

Perdew, J. P., Burke, K. & Ernzerhof, M. Generalized gradient approximation made simple. Phy. Rev. Lett. 77, 3865–3868 (1996).

Grimme, S. Semiempirical GGA-type density functional constructed with a long-range dispersion correction. J. Comput. Chem. 27, 1787–1799 (2006).

Klimeš, J., Bowler, D. R. & Michaelides, A. Van der Waals density functionals applied to solids. Phys. Rev. B 83, 195131 (2011).

Becke, A. D. & Johnson, E. R. A simple effective potential for exchange. J. Chem. Phys. 124, 221101 (2006).

Tran, F. & Blaha, P. Accurate band gaps of semiconductors and insulators with a semilocal exchange-correlation potential. Phys. Rev. Lett. 102, 226401 (2009).

Heyd, J., Scuseria, G. E. & Ernzerhof, M. Hybrid functionals based on a screened Coulomb potential. J. Chem. Phys. 118, 8207–8215 (2003).

Heyd, J., Scuseria, G. E. & Ernzerhof, M. Erratum: ‘Hybrid functionals based on a screened Coulomb potential’. J. Chem. Phys. 124, 219906 (2006).

Klimes, J., Bowler, D. R. & Michaelides, A. Chemical accuracy for the van der Waals density functional. Condens. Matter Phys. 22, 022201 (2010).

Hultgren, R., Gingrich, N. S. & Warren, B. E. The atomic distribution in red and black phosphorus and the crystal structure of black phosphorus. J. Chem. Phys. 3, 351–355 (1935).

Brown, A. & Rundqvist, S. Refinement of the crystal structure of black phosphorus. Acta Cryst. 19, 684–685 (1965).

Cartz, L. et al. Effect of pressure on bonding in black phosphorus. J. Chem. Phys. 71, 1718–1721 (1979).

Keyes, R. The electrical properties of black phosphorus. Phys. Rev. 92, 580–584 (1953).

Warschauer, D. Electrical and optical properties of crystalline black phosphorus. J. Appl. Phys. 34, 1853–1860 (1963).

Maruyama, Y., Suzuki, S., Kobayashi, K. & Tanuma, S. Synthesis and some properties of black phosphorus single crystals. Physica B+C 105, 99–102 (1981).

Akahama, Y., Endo, S. & Narita, S.-I. Electrical properties of black phosphorus single crystals. J. Phys. Soc. Jpn 52, 2148–2155 (1983).

Morita, A., A., H., Kaneta, C. & Sasaki, T. Anisotropic mobility and electron-phonon interaction in black phosphorus. Proc. 17th Int. Conf. Phys. Semicond. 1320–1324 (1985).

Walukiewicz, W., Ruda, H., Lagowski, J. & Gatos, H. Electron mobility in modulation-doped heterostructures. Phys. Rev. B 30, 4571–4582 (1984).

Kaasbjerg, K., Thygesen, K. S. & Jacobsen, K. W. Phonon-limited mobility in n-type single-layer MoS2 from first principles. Phys. Rev. B 85, 115317 (2012).

Du, Y., Ouyang, C., Shi, S. & Lei, M. Ab initio studies on atomic and electronic structures of black phosphorus. J. Appl. Phys. 107, 093718 (2010).

Rodin, A. S., Carvalho, A. & Castro Neto, A. H. Strain-induced gap modification in black phosphorus. Phys. Rev. Lett. 112, 176801 (2014).

Bruzzone, S. & Fiori, G. Ab-initio simulations of deformation potentials and electron mobility in chemically modified graphene and two-dimensional hexagonal boron-nitride. Appl. Phys. Lett. 99, 2108 (2011).

Takagi, S.-i., Toriumi, A., Iwase, M. & Tango, H. On the universality of inversion layer mobility in Si MOSFET's: part I-effects of substrate impurity concentration. IEEE Trans. Electr. Dev. 41, 2357–2362 (1994).

Fiori, G. & Iannaccone, G. Multiscale modeling for graphene-based nanoscale transistors. Proc. IEEE 101, 1653–1669 (2013).

Bardeen, J. & Shockley, W. Deformation potentials and mobilities in non-polar crystals. Phys. Rev. 80, 72–80 (1950).

Xi, J. et al. First-principles prediction of charge mobility in carbon and organic nanomaterials. Nanoscale 4, 4348–4369 (2012).

Liu, L., Feng, Y. & Shen, Z. Structural and electronic properties of h-BN. Phy. Rev. B 68, 104102 (2003).

Liu, H. et al. Phosphorene: an unexplored 2D semiconductor with a high hole mobility. ACS Nano 8, 4033–4041 (2014).

Li, L. et al. Black phosphorus field-effect transistors. Nat. Nanotech. 9, 372–377 (2014).

Blöchl, P. E. Projector augmented-wave method. Phys. Rev. B 50, 17953–17979 (1994).

Kresse, G. & Joubert, D. From ultrasoft pseudopotentials to the projector augmented-wave method. Phys. Rev. B 59, 1758–1775 (1999).

Kresse, G. & Furthmüller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 54, 11169–11186 (1996).