High-linearity and variable gate-voltage swing dual-gate In/sub 0.5/Ga/sub 0.5/P/In/sub 0.2/Ga/sub 0.8/As pseudomorphic high electron mobility transistors
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - Trang 226-229
Tóm tắt
InGaP/InGaAs pseudomorphic high electron mobility transistors (PHEMTs) fabricated using single-gate and dual-gate methodologies have been characterized with special emphasis to precisely control the device linearity and the gate-voltage swing. The key features of the proposed PHEMT profile are characterized in a composite channel by using a GaAs delta sheet and an undoped InGaAs layer. The gate voltage dependence of transconductance for the first equivalent gate with several V/sub gs2/ shows that the gate voltage swing available is in the range of 0 to 4.5 V.
Từ khóa
#PHEMTs #Indium gallium arsenide #Voltage #Electron mobility #HEMTs #MODFETs #Electric variables control #Linearity #Gallium arsenide #TransconductanceTài liệu tham khảo
10.1063/1.123785
10.1109/16.557731
10.1109/55.468286
10.1049/el:19980682
10.1063/1.365650
10.1116/1.582513