High-current injection in Spreading-Resistance Temperature sensor on SOI

Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) - Trang 69-72
Z.H. Wu1, P.T. Lai1, Bin Li2, J.K.O. Sin3
1Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong, China
2Department of Applied Physics, South China University of Technology, Guangzhou, China
3Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Hong Kong, China

Tóm tắt

A high-current injection phenomenon was found in Spreading-Resistance Temperature (SRT) sensor on SOI. Simulation and experiment of the sensor with different silicon-film thicknesses and doping concentrations were conducted to demonstrate this phenomenon, which can be explained by the conductivity modulation model normally used in LIGBT. This study is very helpful for designing the operating current of SRT sensor on SOI.

Từ khóa

#Temperature sensors #Thick film sensors #Sensor phenomena and characterization #Doping #Thin film sensors #Conductivity #Thermal sensors #Silicon compounds #Physics #Silicon devices

Tài liệu tham khảo

xu, 1993, Ceramic Materials for Electronics 10.1109/16.7413 10.1109/SOI.1995.526487 li, 2001, Spreading-resistance temperature sensor on thin-film SOI, Proc 2001 IEEE Hong Kong Electron Devices Meeting, 75 hout, 1997, A 400 °C silicon Hall sensor, Sensors and Actuators A, 60, 14, 10.1016/S0924-4247(96)01412-4
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Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)

69-72

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