High-<tex>$kappa$</tex>/Metal–Gate Stack and Its MOSFET Characteristics

IEEE Electron Device Letters - Tập 25 Số 6 - Trang 408-410 - 2004
R. Chau1, Suman Datta1, M. Doczy1, Barry M. Doyle1, J. Kavalieros1, M. Metz1
1Logic Technol. Dev., Intel Corp., Hillsboro, OR, USA

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Tài liệu tham khảo

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