High Precision Physical Model for Nickel MILC

Springer Science and Business Media LLC - Tập 715 - Trang 2281-2286 - 2011
C. F. Cheng1, W. M. Cheung1, K. L. Ng1, P. J. Chan1, M. C. Poon1, Mansun Chan1, C. W. Kok1
1Department of Electrical and Electronic Engineering, The Hong Kong University of Science & Technology, Sai Kung, Hong Kong

Tóm tắt

Mechanism and growth rate of Metal-Induced-Lateral-Crystallization (MILC) with annealing temperature range from 550°C to 625°C were studied. Base on the MILC growth mechanism and effect of metal diffusion, a modeling on metal impurity distribution was developed. The modeling can be used to predict the distribution of metal impurity formed in the polysilicon layer after MILC annealing process. By applying the modeling, effects of annealing on the metal impurity distribution can be analyzed.

Tài liệu tham khảo

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Springer Science and Business Media LLC

Tập 715

2281-2286

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