HgCdTe MWIR Back-Illuminated Electron-Initiated Avalanche Photodiode Arrays

Journal of Electronic Materials - Tập 36 Số 8 - Trang 1059-1067 - 2007
M. B. Reine1, J. Marciniec1, K. K. Wong1, T. Parodos1, J.D. Mullarkey1, P. Lamarre1, S. P. Tobin1, K.A. Gustavsen1, G. M. Williams2
1BAE Systems, Lexington, USA
2Voxtel Inc., Beaverton, USA

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Tài liệu tham khảo

G. Leveque, M. Nasser, D. Bertho, B. Orsal and R. Alabedra, Semicond. Sci. Technol. 8, 1317 (1993)

T.J. de Lyon, B. Baumgratz, G. Chapman, E. Gordon, A.T. Hunter, M. Jack, J.E. Jensen, W. Johnson, B. Johs, K. Kosai, W. Larsen, G.L. Olson, M. Sen, and B. Walker, Proc. SPIE 3629, 256 (1999)

T. Nguyen Duy, A. Durand and J.L. Lyot, Mater. Res. Soc. Symp. Proc. 90, 81 (1987)

R.E. DeWames, J.G. Pasko, D.L. McConnell, J.S. Chen, J. Bajaj, L.O. Bubulac, E.S. Yao, G.L. Bostrup, R. Zucca, G.M. Williams, A.M. Blume, and T.P. Weismuller (Extended Abstracts, 1989 U.S. Workshop on the Physics and Chemistry of II-VI Materials, San Diego, California, 3–5 October 1989)

C.T. Elliott, N.T. Gordon, R.S. Hall, G. Crimes and J. Vac, Sci. Technol. A8, 1251 (1990)

J.D. Beck, C.-F. Wan, M.A. Kinch and J.E. Robinson, Proc. SPIE 4454, 188 (2001)

M.A. Kinch, J.D. Beck, C.-F. Wan, F. Ma and J. Campbell, J. Electronic Mater. 33, 630 (2004)

F. Ma, X. Li, J.C. Campbell, J.D. Beck, C.-F. Wan and M.A. Kinch, Appl. Phys. Lett. 83, 785 (2003)

I. Baker, S. Duncan and J. Copley, Proc. SPIE 5406, 133 (2004)

M. Vaidyanathan, A. Joshi, S. Xue, B. Hanyaloglu, M. Thomas, M. Zandian, D. Edwall, G. Williams, J. Blackwell, W. Tennant, and G. Hughes (2004 IEEE Aerospace Conference Proceedings, 2004), pp. 1776–1781

R.S. Hall, N.T. Gordon, J. Giess, J.E. Hails, A. Graham, D.C. Herbert, D.J. Hall, P. Southern, J.W. Cairns, D.J. Lees and T. Ashley, Proc. SPIE 5783, 412 (2005)

J. Beck, C. Wan, M. Kinch, J. Robinson, P. Mitra, R. Scritchfield, F. Ma and J. Campbell, Proc. SPIE 5564, 44 (2004)

J. Beck, C. Wan, M. Kinch, J. Robinson, P. Mitra, R. Scritchfield, F. Ma and J. Campbell, J. Electron. Mater. 35, 1166 (2006)

P. Mitra, J.D. Beck, M.R. Skokan, J.E. Robinson, C.A. Musca, J.M. Dell and L. Faraone, Proc. SPIE 6295, 62950G (2006)

G. Perrais, O. Gravrand, J. Baylet, G. Destefanis and J. Rothman, J. Electronic Materials 36, August 2007 (to be published)

M.B. Reine, J.W. Marciniec, K.K. Wong, T. Parodos, J.D. Mullarkey, P.A. Lamarre, S.P. Tobin, K.A. Gustavsen and G.M. Williams, Proc. SPIE 6294, 629503 (2006)

A. Biswas, B. Madden-Woods, M. Srinivasen, V. Vilnrotter and W. Farr, Proc. SPIE 4635, 72 (2002)

A. Biswas, V. Vilnrotter, W. Farr, D. Fort and E. Sigman, Proc. SPIE 4635, 224 (2002)

P. LoVecchio, K. Wong, T. Parodos, S.P. Tobin, M.A. Hutchins and P.W. Norton, Proc. SPIE 5564, 65 (2004)

M.B. Reine, Chapter 12 in Infrared Detectors and Emitters: Materials and Devices, ed. P. Capper and C. T. Elliott (Boston: Kluwer Academic Publishers, 2001)

M.A. Kinch, Proc. SPIE 4369, 566 (2001)

M. Liu, S. Wang, J.C. Campbell, J.D. Beck, C.-F. Wan and M.A. Kinch, J. Appl. Phys. 98, 074509 (2005).

S.M. Sze and K.K. Ng, Physics of Semiconductor Devices, 3nd edition,(New York: Wiley, 2007), p. 678