Growth of n-Si layers by molecular-beam epitaxy on the substrates heavily doped with boron
Tóm tắt
Epitaxial n-Si layers doped with phosphorus or erbium have been grown by sublimation molecularbeam epitaxy at 500°C on heavily boron-doped p
+-type substrates with resistivity ρ = 0.005 Ω cm. Distribution profiles of the B, Er, and O impurity concentrations in the samples were determined by secondary-ion mass spectrometry. A thermal annealing of the substrate in vacuum at 1300°C for 10 min and growth at a very low substrate temperature made it possible to obtain an extremely abrupt profile for doping impurities at the layer-substrate interface. This method for growth of n-p
+ junctions considerably improves their electrical and luminescent characteristics.
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