Growth of high quality epitaxial Ge films on (100)Si by sputter deposition

Applied Physics Letters - Tập 40 Số 8 - Trang 696-698 - 1982
G. Bajor1, Ken Cadien1, Mark Ray1, J. E. Greene1, P. S. Vijayakumar2
1Departments of Metallurgy, the Coordinated Science Laboratory, and the Materials Research Laboratory, University of Illinois at Urbana–Champaign, Urbana, Illinois 61801
2ARCO Solar, Incorporated, Chatsworth, California 91311

Tóm tắt

Expitaxial Ge films ∼1.5 μm thick, were grown on (100) Si substrates at relatively low temperatures, 470°C, by rf sputter deposition. Low-energy ion bombardment of the substrate and growing film during deposition provided compositional grading of the lattice mismatched interface. X-ray diffraction and electron channeling spectra indicated that the films were single crystals while Hall measurements showed them to be p type with p(300 K)≃1×1017 cm−3 and corresponding carrier mobilities, 1280 cm2/Vs, comparable to the best bulk crystals. The thickness of the compositionally graded junction was found by Auger electron spectroscopy depth profiling to be ∼200 nm. C-V measurements indicated that over this region the net acceptor concentration increased from 4×1014 cm−3 near the substrate surface to the bulk film value of 1×1017 cm−3. Large area p-n diodes exhibited reverse breakdown voltages of ⩾10 V.

Từ khóa


Tài liệu tham khảo

1981, Appl. Phys. Lett., 38, 779, 10.1063/1.92160

1981, Appl. Phys. Lett., 39, 245, 10.1063/1.92695

1980, Appl. Phys. Lett., 37, 734, 10.1063/1.92063

1982, J. Cryst. Growth, 56, 389, 10.1016/0022-0248(82)90458-4

1980, J. Appl. Phys., 51, 4444, 10.1063/1.328265

1969, J. Mater. Sci., 4, 223, 10.1007/BF00549922

1976, J. Appl. Phys., 47, 473

1976, J. Appl. Phys., 47, 2289, 10.1063/1.323020

1967, IEEE Trans. Electron Devices, ED-14, 63

Thông tin
Thông tin xuất bản

Applied Physics Letters

Tập 40 Số 8

696-698

Thông tin tác giả