Growth of GaN crystals by Na flux LPE method

Physica Status Solidi (A) Applications and Materials Science - Tập 207 Số 6 - Trang 1283-1286 - 2010
Yusuke Mori1, Yasuo Kitaoka1, Mamoru Imade1, Fumio Kawamura1, Nobuya Miyoshi1, Masashi Yoshimura1, T. Sasaki1
1Graduate School of Engineering, Osaka University, 2–1 Yamadaoka, Suita, Osaka 565–0871, Japan

Tóm tắt

AbstractHigh‐quality and low‐cost bulk crystals are needed in the field of group III nitride semiconductors in order to develop optical and electrical devices. Controlling the nucleation phenomenon and solution condition during growth is important for growth of bulk GaN crystal by the Na flux method. The carbon doping into the solution and the forced induction of solution flow are effective to control them. We also present some attempts for improving the quality of seed substrate for fabrication of boule‐sized bulk GaN crystals.

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Tài liệu tham khảo

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Thông tin xuất bản

Physica Status Solidi (A) Applications and Materials Science

Tập 207 Số 6

1283-1286

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