General Relationship for the Thermal Oxidation of Silicon

Journal of Applied Physics - Tập 36 Số 12 - Trang 3770-3778 - 1965
B. E. Deal1, Andrew S. Grove1
1Fairchild Semiconductor, A Division of Fairchild Camera and Instrument Corporation, Palo Alto, California

Tóm tắt

The thermal-oxidation kinetics of silicon are examined in detail. Based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived. This relationship is shown to be in excellent agreement with oxidation data obtained over a wide range of temperature (700°–1300°C), partial pressure (0.1–1.0 atm) and oxide thickness (300–20 000 Å) for both oxygen and water oxidants. The parameters A, B, and τ are shown to be related to the physico-chemical constants of the oxidation reaction in the predicted manner. Such detailed analysis also leads to further information regarding the nature of the transported species as well as space-charge effects on the initial phase of oxidation.

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Tài liệu tham khảo

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Thông tin
Thông tin xuất bản

Journal of Applied Physics

Tập 36 Số 12

3770-3778

Thông tin tác giả