Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging

Microelectronics Reliability - Tập 76 - Trang 344-349 - 2017
J.G. Tartarin1, O. Lazar1, D. Saugnon1, B. Lambert2, C. Moreau3, C. Bouexiere3, E. Romain-Latu4, K. Rousseau4, A. David5, J.L. Roux6
1LAAS-CNRS and Université de Toulouse, Université Paul Sabatier, 31031 Toulouse, France
2United Monolithic Semiconductors, Villebon-sur Yvette 91140, France
3DGA MI, Rennes 35998, France
4SERMA Technologies MINATEC BHT, Grenoble 38040, France
5Biophy Research, Fuveau 13710, France
6CNES, Quality Assurance Directorate Department, Toulouse 31400, France

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Microelectronics Reliability

Tập 76

344-349

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