GaN/AlGaN p-channel inverted heterostructure JFET
Tóm tắt
A novel GaN/AlGaN p-channel inverted heterostructure junction field-effect transistor (HJFET) with a n/sup +/-type gate is proposed and demonstrated. A new superlattice aided strain compensation techniques was used for fabricating high quality GaN/AlGaN p-n junction. The p-channel HJFET gate leakage current was below 10 nA, and the threshold voltage was 8 V, which is close to that of typical n-channel HFETs. This new HJFET device opens up a way for fabricating nitride based complimentary integrated circuits.
Từ khóa
#Gallium nitride #Aluminum gallium nitride #FETs #Superlattices #Capacitive sensors #P-n junctions #Leakage current #Threshold voltage #HEMTs #MODFETsTài liệu tham khảo
zhang, 0, Appl Phys Lett
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10.1063/1.1476054