GaAs reflection photocathodes grown by metal alkyl vapor phase epitaxy

Applied Physics Letters - Tập 28 Số 3 - Trang 113-115 - 1976
M.B. Allenson, S. J. Bass

Tóm tắt

GaAs reflection photocathodes grown by vapor-phase epitaxy using trimethyl gallium and arsine have been activated to a maximum sensitivity of 1150 μA 1m−1. The material is of high quality and has diffusion lengths and surface escape probabilities which are comparable with those measured for liquid-phase epitaxial material.

Từ khóa


Tài liệu tham khảo

1970, Proc. IEEE, 58, 1788, 10.1109/PROC.1970.8019

1974, IEEE Trans. Electron. Devices, 21, 641, 10.1109/T-ED.1974.17983

1972, J. Phys. D, 5, L89, 10.1088/0022-3727/5/10/101

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1974, Appl. Phys. Lett., 25, 482, 10.1063/1.1655557

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1970, J. Appl. Phys., 41, 802, 10.1063/1.1658753

1973, J. Phys., 6, 14

1971, J. Phys. D, 4, 308, 10.1088/0022-3727/4/2/317

Thông tin
Thông tin xuất bản

Applied Physics Letters

Tập 28 Số 3

113-115

Thông tin tác giả