GaAs-based tunnel junctions for micro-cavity devices

LEOS Summer Topical Meeting - Trang MH5-MH5
C. Moller1, J. Bottcher1, M. Protsch2, H. Kunzel1
1Heinrich-Hertz-Institut fuer Nachrichtentechnik Berlin GmbH, Berlin, Germany
2EPIGAP Optoelektronik GmbH, Berlin, Germany

Tóm tắt

The development of high quality GaAs-based tunnel junctions grown by MBE was systematically studied. Fabricated Si/Be-doped GaAs tunnel junctions show record low junction resistance. The enhancement of lateral current spreading is demonstrated.

Từ khóa

#Gallium arsenide #Tunneling #Doping #Distributed Bragg reflectors #Temperature #Light sources #Contacts #Electric resistance #Apertures #Electron mobility

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LEOS Summer Topical Meeting

MH5-MH5

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