Fundamental limitations in microelectronics—I. MOS technology

Solid-State Electronics - Tập 15 Số 7 - Trang 819-829 - 1972
M. Hohlfeld1, C. Alden Mead1
1California Institute of Technology, Pasadena, California 91109 USA

Tóm tắt

Từ khóa


Tài liệu tham khảo

Deal, 1967, J. electrochem. Soc., 114, 266, 10.1149/1.2426565

Lenzlinger, 1969, J. appl. Phys., 40, 278, 10.1063/1.1657043

Klein, 1966, IEEE Trans. Electron Devices, ED-13, 788, 10.1109/T-ED.1966.15844

Grove, 1967, IEEE Trans. Electron Devices, ED-14, 157, 10.1109/T-ED.1967.15916

B. Hoeneisen and C.A. Mead, IEEE Trans. Electron Devices. To be published

Blech, 1967, Appl. Phys. Lett., 11, 263, 10.1063/1.1755127

Altman, 1971, Electronics, 44, 50

Weinerth, 1967, Solid-St. Electron., 10, 1053, 10.1016/0038-1101(67)90123-2

Chynoweth, 1960, Phys. Rev., 118, 425, 10.1103/PhysRev.118.425

Miller, 1957, Phys. Rev., 105, 1246, 10.1103/PhysRev.105.1246

Shields, 1959, J. electron. Control, 6, 130, 10.1080/00207215908937136

Logan, 1963, Phys. Rev., 131, 89, 10.1103/PhysRev.131.89

Irvin, 1962, Bell Syst. tech. J., 41, 387, 10.1002/j.1538-7305.1962.tb02415.x

Sze, 1966, Solid-St. Electron., 9, 831, 10.1016/0038-1101(66)90033-5