Front-end of line and middle-of-line time-dependent dielectric breakdown reliability simulator for logic circuits

Microelectronics Reliability - Tập 76 - Trang 81-86 - 2017
Kexin Yang1, Taizhi Liu1, Rui Zhang2, Dae-Hyun Kim2, Linda Milor1
1School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, United States
2School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, United States

Tài liệu tham khảo

Chen, 2015, Breakdown data generation and in-die deconvolution methodology to address BEOL and MOL dielectric breakdown challenges, Microelectron. Reliab., 55, 2727, 10.1016/j.microrel.2015.09.017 Cha, 2014 Chen, 2014, System-level modeling of microprocessor reliability degradation due to BTI and HCI, CA-8.1 Wang, 2011, A unified aging model of NBTI and HCI degradation towards lifetime reliability management for nanoscale MOSFET circuits, 175 Cha, 2017, Negative bias temperature instability and gate oxide breakdown modeling in circuits with die-to-die calibration through power supply and ground signal measurements Liu, 2017, Comprehensive reliability-aware statistical timing analysis using a unified gate-delay model for microprocessors Maricau, 2010, Efficient variability-aware NBTI and hot carrier circuit reliability analysis, IEEE Trans. Comput. Des. Integr. Circuits Syst., 29, 1884, 10.1109/TCAD.2010.2062870 Cheng, 2011, Impact of NBTI/PBTI on SRAM stability degradation, IEEE Electron Device Lett., 32, 740, 10.1109/LED.2011.2136316 Cha, 2016, Design for reliability: a duty-cycle management system for timing violations Liu, 2015, System-level variation-aware aging simulator using a unified novel gate-delay model for bias temperature instability, hot carrier injection, and gate oxide breakdown, Microelectron. Reliab., 55, 1334, 10.1016/j.microrel.2015.06.008 Chen, 2016, System-level modeling of microprocessor reliability degradation due to bias temperature instability and hot carrier injection, IEEE Trans. Very Large Scale Integr. Syst., 24, 2712, 10.1109/TVLSI.2016.2520658 Yang, 2015, Impact of stress acceleration on mixed-signal gate oxide lifetime, 1 Liu, 2015, Comprehensive reliability and aging analysis on SRAMs within microprocessor systems, Microelectron. Reliab., 55, 1290, 10.1016/j.microrel.2015.06.078 Cha, 2014, Frontend wearout modeling from device to system with power/ground signature analysis, 135 Bashir, 2011, Backend low-k TDDB chip reliability simulator Chen, 2013, System-level modeling and microprocessor reliability analysis for backend wearout mechanisms, 1615 He, 2012, Electromigration reliability of interconnections in RF low noise amplifier circuit, Microelectron. Reliab., 52, 446, 10.1016/j.microrel.2011.09.033 Jung, 2014, TSV stress-aware full-chip mechanical reliability analysis and optimization for 3D IC, Commun. ACM, 57, 107, 10.1145/2494536 Li, 2008, Compact modeling of MOSFET wearout mechanisms for circuit-reliability simulation, IEEE Trans. Device Mater. Reliab., 8, 98, 10.1109/TDMR.2008.915629 Ahn, 2013, Product-Level reliability estimator with advanced CMOS technology, PR.1.1 Haase, 2007, Modeling of interconnect dielectric lifetime under stress conditions and new extrapolation methodologies for time-dependent dielectric breakdown, 390 Yiang, 2008, TDDB kinetics and their relationship with the E-and√ E-models, 168 Milor, 2010, Area scaling for backend dielectric breakdown, IEEE Trans. Semicond. Manuf., 23, 429, 10.1109/TSM.2010.2051730 Kwasnick, 2011, Determination of CPU use conditions Zhang, 2017, Finepar: irregularityaware fine-grained workload partitioning on integrated architectures