Formation of artificial BaTiO3/SrTiO3 superlattices using pulsed laser deposition and their dielectric properties

Applied Physics Letters - Tập 65 Số 15 - Trang 1970-1972 - 1994
Hitoshi Tabata1, Hidekazu Tanaka1, Tomoji Kawai1
1The Institute of Scientific and Industrial Research, Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka 567, Japan

Tóm tắt

We have formed strained dielectric superlattices of BaTiO3 (BTO) and SrTiO3 (STO) by a pulsed laser deposition technique. A large strain of 400–500 MPa is introduced at the interface between the BTO and STO layers. A large dielectric constant of 900 was observed with a stacking periodicity of 2 unit cells/2 unit cells. The superlattices show drastically different electrical behavior from that of the solid solution (Sr,Ba)TiO3 films. Broad maxima of the dielectric constants occur around 40–50 °C and the values remain large even for a temperature above 200 °C.

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Tài liệu tham khảo

1992, Nature, 358, 136, 10.1038/358136a0

1947, J. Am. Ceram. Soc., 30, 114, 10.1111/j.1151-2916.1947.tb18879.x

1990, Phys. Rev. B, 42, 2604, 10.1103/PhysRevB.42.2604

1989, Phys. Rev. B, 39, 2432, 10.1103/PhysRevB.39.2432

1991, Phys. Rev. Lett., 66, 2480, 10.1103/PhysRevLett.66.2480

1992, Appl. Phys. Lett., 60, 1744, 10.1063/1.107204

1993, Phys. Rev. Lett., 70, 2633, 10.1103/PhysRevLett.70.2633

1991, Jpn. J. Appl. Phys., 30, 3562, 10.1143/JJAP.30.3562

1980, Oyobutsuri, 49, 783

1979, J. Vac. Sci. Technol., 16, 315, 10.1116/1.569935

1987, J. Appl. Phys., 62, 4475, 10.1063/1.339037

1993, Appl. Phys. Lett., 62, 1056, 10.1063/1.108793

1993, J. Appl. Phys., 5679

1993, Appl. Phys. Lett., 62, 1845, 10.1063/1.109522

1992, J. Am. Ceram. Soc., 75, 1999, 10.1111/j.1151-2916.1992.tb07234.x

1991, J. Appl. Phys., 69, 767, 10.1063/1.347362

1971, Phys. Rev. B, 4, 155, 10.1103/PhysRevB.4.155