Formation of a few nanometer wide holes in membranes with a dual beam focused ion beam system

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena - Tập 21 Số 6 - Trang 2720-2723 - 2003
T. Schenkel1, Velimir Radmilović1, E.A. Stach1, S.-J. Park1, Arun Persaud1
1E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720

Tóm tắt

When nanometer-scale holes (diameters of 50 to a few hundred nm) are imaged in a scanning electron microscope (SEM) at pressures in the 10−5 to 10−6 Torr range, hydrocarbon deposits build up and result in the closing of holes within minutes of imaging. Additionally, electron or ion beam assisted deposition of material from a gas source allows the closing of holes with films of platinum or tetraethylorthosilicate oxide. In an instrument equipped both with a focused ion beam, and a SEM, holes can be formed and then covered with a thin film to form nanopores with controlled openings, ranging down to only a few nanometers, well below resolution limits of primary beams.

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Tài liệu tham khảo

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Thông tin xuất bản

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Tập 21 Số 6

2720-2723

Thông tin tác giả