First-principles calculation of intrinsic carrier mobility of silicene

Journal of Applied Physics - Tập 114 Số 9 - 2013
Zhi-Gang Shao1, Xue-Sheng Ye1, Lei Yang2, Canglong Wang2
1Laboratory of Quantum Engineering and Quantum Materials, SPTE, South China Normal University 1 , Guangzhou 510006, China
2Institute of Modern Physics, Chinese Academy of Sciences, and Department of Physics, Lanzhou University 2 , Lanzhou 730000, China

Tóm tắt

The intrinsic carrier mobility of silicene is calculated using first-principles methods incorporating density functional theory, Boltzman transport equation, and the deformation potential theory. The electron mobility is 2.57×105 cm2V-1s-1 and the hole mobility is 2.22×105 cm2V-1s-1 at room temperature, which is smaller than that of graphene but still very high.

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Journal of Applied Physics

Tập 114 Số 9

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