V. Senez1, A. Armigliato2, G. Carlotti3, G. Carnevale4, H. Jaouen5, I. de Wolff
1IEMN-ISEN, Villeneuve d'Ascq Cedex, France
2CNR-IMM, Bologna, Italy
3INFM and Dipartimento di Fisica dell ‘Universita’, Perugia, Italy
4STMicroelectronics, Agrate Brianza, Italy
5STMicroelectronics-Central R&D, Crolles, France
Tóm tắt
Nowadays, silicon technologies with feature sizes around 100 nm are used in the microelectronics industry to produce gigabits integrated circuits. The prime part of numerical simulation in their development is now well established. One of the purpose of the numerical analyses is the improvement of the mechanical reliability. We synthetize in this paper various works we have performed on the macroscopical modeling and simulation of stress problems and their effects in silicon technologies.