Ferroelectricity in hafnium oxide thin films

Applied Physics Letters - Tập 99 Số 10 - 2011
T. S. Böscke1, Johannes Müller2, D. Bräuhaus3, Uwe Schroeder4, U. Böttger3
11Löberwallgraben 2, 99096 Erfurt, Germany
22Fraunhofer CNT, 01099 Dresden, Germany
3Institut für Werkstoffe der Elektrotechnik 3 RWTH Aachen, , 52062 Aachen, Germany
44Namlab gGmbH, 01187 Dresden, Germany

Tóm tắt

We report that crystalline phases with ferroelectric behavior can be formed in thin films of SiO2 doped hafnium oxide. Films with a thickness of 10 nm and with less than 4 mol. % of SiO2 crystallize in a monoclinic/tetragonal phase mixture. We observed that the formation of the monoclinic phase is inhibited if crystallization occurs under mechanical encapsulation and an orthorhombic phase is obtained. This phase shows a distinct piezoelectric response, while polarization measurements exhibit a remanent polarization above 10 μC/cm2 at a coercive field of 1 MV/cm, suggesting that this phase is ferroelectric. Ferroelectric hafnium oxide is ideally suited for ferroelectric field effect transistors and capacitors due to its excellent compatibility to silicon technology.

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Applied Physics Letters

Tập 99 Số 10

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