Features of the Kinetics of Bulk and Heterogeneous Processes in CHF3 + Ar and C4F8 + Ar Plasma Mixtures
Tóm tắt
We carry out a comparative study of the kinetics of plasma-chemical processes and plasma composition in CHF3 + Ar and C4F8 + Ar mixtures under the conditions of a high-frequency (13.56 MHz) induction discharge. Using diagnostic methods and plasma modeling, the general features and differences of the plasma’s electrophysical parameters in the studied systems are established together with the key bulk processes that determine the stationary concentrations of neutral particles. Тhe CHF3 + Ar system in the range 0–75% Ar is shown to be characterized by lower values of the flux densities of the fluorine atoms and polymer of the forming radicals. Model analysis of the kinetics of the heterogeneous processes (etching, polymerization, degradation of the polymer film) confirmed the advantage of the C4F8 + Ar system of silicon etching anisotropy and etching selectivity compared to the SiO2/Si system.
Tài liệu tham khảo
citation_title=Handbook of Plasma Processing Technology; citation_publication_date=1990; citation_id=CR1; citation_publisher=Noyes
citation_title=Process Technology; citation_publication_date=2000; citation_id=CR2; citation_author=S. Wolf; citation_author=R.N. Tauber; citation_publisher=Lattice
citation_title=Dry Etching for VLSI; citation_publication_date=1991; citation_id=CR3; citation_author=A.J. Roosmalen; citation_author=J.A.G. Baggerman; citation_author=S.J.H. Brader; citation_publisher=Plenum
citation_title=Principles of Plasma Discharges and Materials Processing; citation_publication_date=1994; citation_id=CR4; citation_author=M.A. Lieberman; citation_author=A.J. Lichtenberg; citation_publisher=Wiley
citation_journal_title=J. Vac. Sci. Technol., A; citation_title=Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide; citation_author=T.E.F.M. Standaert, C. Hedlund, E.A. Joseph, G.S. Oehrlein; citation_volume=22; citation_publication_date=2004; citation_pages=53-60; citation_doi=10.1116/1.1626642; citation_id=CR5
citation_journal_title=J. Vac. Sci. Technol., A; citation_title=Polymerization of fluorocarbons in reactive ion etching plasmas; citation_author=W.W. Stoffels, E. Stoffels, K. Tachibana; citation_volume=16; citation_publication_date=1998; citation_pages=87-95; citation_doi=10.1116/1.581016; citation_id=CR6
citation_journal_title=J. Vac. Sci. Technol., A; citation_title=Modeling the plasma chemistry of C2F6 and CHF3 etching of silicon dioxide, with comparisons to etch rate and diagnostic data; citation_author=P. Ho, J.E. Johannes, R.J. Buss; citation_volume=19; citation_publication_date=2001; citation_pages=2344-2367; citation_doi=10.1116/1.1387048; citation_id=CR7
citation_journal_title=Plasma Sources Sci. Technol.; citation_title=Uncertainty and sensitivity analysis of gas-phase chemistry in a CHF3 plasma; citation_author=D. Bose, M.V.V.S. Rao, T.R. Govindan, M. Meyyappan; citation_volume=12; citation_publication_date=2003; citation_pages=225-234; citation_doi=10.1088/0963-0252/12/2/314; citation_id=CR8
citation_journal_title=J. Nanosci. Nanotechnol.; citation_title=On the etching characteristics and mechanisms of HfO2 thin films in CF4/O2/Ar and CHF3/O2/Ar plasma for nano-devices; citation_author=N. Lim, A. Efremov, G.Y. Yeom, K.-H. Kwon; citation_volume=14; citation_publication_date=2014; citation_pages=9670-9679; citation_doi=10.1166/jnn.2014.10171; citation_id=CR9
citation_journal_title=J. Phys. D: Appl. Phys.; citation_title=A global model for C4F8 plasmas coupling gas phase and wall surface reaction kinetics; citation_author=G. Kokkoris, A. Goodyear, M. Cooke, E. Gogolides; citation_volume=41; citation_publication_date=2008; citation_pages=195211; citation_doi=10.1088/0022-3727/41/19/195211; citation_id=CR10
citation_journal_title=J. Vac. Sci. Technol., A; citation_title=Model for an inductively coupled Ar/C–C4F8 plasma discharge; citation_author=S. Rauf, P.L.G. Ventzek; citation_volume=20; citation_publication_date=2002; citation_pages=14-23; citation_doi=10.1116/1.1417538; citation_id=CR11
citation_journal_title=Thin Solid Films; citation_title=A comparative study of CF4/O2/Ar and C4F8/O2/Ar plasmas for dry etching applications; citation_author=I. Chun, A. Efremov, G.Y. Yeom, K.-H. Kwon; citation_volume=579; citation_publication_date=2015; citation_pages=136-148; citation_doi=10.1016/j.tsf.2015.02.060; citation_id=CR12
citation_journal_title=Appl. Phys. Lett.; citation_title=Si/SiO2 etch properties using CF4 and CHF3 in radio frequency cylindrical magnetron discharges; citation_author=G.Y. Yeom, M.J. Kushner; citation_volume=56; citation_publication_date=1990; citation_pages=857-859; citation_doi=10.1063/1.103322; citation_id=CR13
citation_journal_title=J. Semicond.; citation_title=Role of CF2 in the etching of SiO2, Si3N4 and Si in fluorocarbon plasma; citation_author=C. Lele, Z. Liang, X. Linda, L. Dongxia, C. Hui, P. Tod; citation_volume=30; citation_publication_date=2009; citation_pages=033005-1; citation_doi=10.1088/1674-4926/30/3/033005; citation_id=CR14
citation_journal_title=Phys. Rev.; citation_title=A floating double probe method for measurements in gas discharges; citation_author=E.O. Johnson, L. Malter; citation_volume=80; citation_publication_date=1950; citation_pages=58-70; citation_doi=10.1103/PhysRev.80.58; citation_id=CR15
citation_title=Plasma Etching: Fundamentals and Applications; citation_publication_date=1998; citation_id=CR16; citation_author=M. Sugavara; citation_publisher=Oxford Univ. Press
citation_journal_title=J. Electrochem. Soc.; citation_title=Model-based analysis of plasma parameters and active species kinetics in Cl2/X (X = Ar, He, N2) inductively coupled plasmas; citation_author=A. Efremov, N.K. Min, B.G. Choi, K.H. Baek, K.-H. Kwon; citation_volume=155; citation_publication_date=2008; citation_pages=D777-D782; citation_doi=10.1149/1.2993160; citation_id=CR17
citation_journal_title=J. Electrochem. Soc.; citation_title=A model-based analysis of plasma parameters and composition in HBr/X (X = Ar, He, N2) inductively coupled plasmas; citation_author=K.-H. Kwon, A. Efremov, M. Kim, N.K. Min, J. Jeong, K. Kim; citation_volume=157; citation_publication_date=2010; citation_pages=H574-H579; citation_doi=10.1149/1.3362943; citation_id=CR18
citation_journal_title=Rev. Phys. Appl.; citation_title=A mass spectrometric diagnostic of C2F6 and CHF3 plasmas during etching of SiO2 and Si; citation_author=G. Turban, B. Grolleau, P. Launay, P. Briaud; citation_volume=20; citation_publication_date=1985; citation_pages=609-620; citation_doi=10.1051/rphysap:01985002008060900; citation_id=CR19
citation_journal_title=Jpn. J. Appl. Phys.; citation_title=Characteristics of fluorocarbon radicals and CHF3 molecule in CHF3 electron cyclotron resonance downstream plasma; citation_author=K. Takahashi, M. Hori, T. Goto; citation_volume=33; citation_publication_date=1994; citation_pages=4745-4758; citation_doi=10.1143/JJAP.33.4745; citation_id=CR20
citation_journal_title=J. Appl. Phys.; citation_title=Cross-section set and chemistry model for the simulation of c‑C4F8 plasma discharges; citation_author=G.I. Font, W.L. Morgan, G. Mennenga; citation_volume=91; citation_publication_date=2002; citation_pages=3530-3538; citation_doi=10.1063/1.1448894; citation_id=CR21
Ho, P., Johannes, J.E., Buss, R.J., and Meeks, E., Chemical reaction mechanisms for modeling the fluorocarbon plasma etch of silicon oxide and related materials, Sandia Report, SAND2001-1292, 2001.
Gray, D.C., Tepermeister, I., and Sawin, H.H., Phenomenological modeling of ion enhanced surface kinetics in fluorine-based plasma etching, J. Vac. Technol., B, 1993, vol. 11, pp. 1243–1257.
citation_journal_title=Plasma Chem. Plasma Process.; citation_title=Role of etch products in polysilicon etching in a high-density chlorine discharge; citation_author=C. Lee, D.B. Graves, M.A. Lieberman; citation_volume=16; citation_publication_date=1996; citation_pages=99-118; citation_doi=10.1007/BF01465219; citation_id=CR24
citation_journal_title=J. Vac. Sci. Technol., A; citation_title=Relationship of etch reaction and reactive species flux in C4F8–Ar–O2 plasma for SiO2 selective etching over Si and Si3N4; citation_author=M. Matsui, T. Tatsumi, M. Sekine; citation_volume=19; citation_publication_date=2001; citation_pages=2089-2096; citation_doi=10.1116/1.1376709; citation_id=CR25