Fabrication of L10-Ordered MnAl Films for Observation of Tunnel Magnetoresistance Effect

Japanese Journal of Applied Physics - Tập 52 Số 6R - Trang 063003 - 2013
Haruaki Saruyama1, Mikihiko Oogane1, Yuta Kurimoto1, Hiroshi Naganuma1, Yasuo Ando1
1Department of Applied Physics, Tohoku University, Sendai 980-8579, Japan

Tóm tắt

We succeeded in fabricating L10-ordered MnAl films with a high perpendicular magnetic anisotropy energy of 107 erg/cm3 and a small average film roughness of 0.4 nm by using a molten Mn–Al sputtering alloyed target and optimizing the substrate temperature. In addition, we investigated the tunnel magnetoresistance (TMR) effect in magnetic tunnel junctions (MTJs) with the prepared L10-ordered MnAl electrode. The TMR effect was observed at RT in an MTJ with a very thin Co50Fe50 layer inserted into the MnAl electrode and MgO tunneling barrier interface. This is the first observation of the TMR effect in MTJs with an L10-ordered MnAl electrode.

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Thông tin xuất bản

Japanese Journal of Applied Physics

Tập 52 Số 6R

063003

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