Fabrication of L1<sub>0</sub>-Ordered MnAl Films for Observation of Tunnel Magnetoresistance Effect

Japanese Journal of Applied Physics - Tập 52 Số 6R - Trang 063003 - 2013
Haruaki Saruyama1, Mikihiko Oogane1, Yuta Kurimoto1, Hiroshi Naganuma1, Yasuo Ando1
1Department of Applied Physics, Tohoku University, Sendai 980-8579, Japan

Tóm tắt

We succeeded in fabricating L10-ordered MnAl films with a high perpendicular magnetic anisotropy energy of 107 erg/cm3 and a small average film roughness of 0.4 nm by using a molten Mn–Al sputtering alloyed target and optimizing the substrate temperature. In addition, we investigated the tunnel magnetoresistance (TMR) effect in magnetic tunnel junctions (MTJs) with the prepared L10-ordered MnAl electrode. The TMR effect was observed at RT in an MTJ with a very thin Co50Fe50 layer inserted into the MnAl electrode and MgO tunneling barrier interface. This is the first observation of the TMR effect in MTJs with an L10-ordered MnAl electrode.

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Tài liệu tham khảo

2010, Curr. Appl. Phys., 10

2012, J. Appl. Phys., 111, 07E318, 10.1063/1.3672411

2006, Appl. Phys. Lett., 88, 172504, 10.1063/1.2198819

2008, Appl. Phys. Lett., 92, 172502, 10.1063/1.2913163

2008, J. Appl. Phys., 103, 07A710, 10.1063/1.2838335

2008, J. Appl. Phys., 103, 07A911, 10.1063/1.2840016

2009, Appl. Phys. Lett., 95, 232516, 10.1063/1.3265740

2006, Appl. Phys. Lett., 88, 172506, 10.1063/1.2198797

2010, Appl. Phys. Express, 3, 053003, 10.1143/APEX.3.053003

2010, Appl. Phys. Lett., 97, 232508, 10.1063/1.3524230

2009, J. Appl. Phys., 105, 07D131, 10.1063/1.3057974

2010, Nat. Mater., 9, 721, 10.1038/nmat2804

1996, J. Magn. Magn. Mater., 159, L1, 10.1016/0304-8853(96)00062-5

2009, Appl. Phys. Lett., 94, 122503, 10.1063/1.3108085

2011, Phys. Rev. Lett., 106, 117201, 10.1103/PhysRevLett.106.117201

2010, J. Appl. Phys., 107, 09A731, 10.1063/1.3337640

2012, J. Appl. Phys., 111, 07A324, 10.1063/1.3676428

2001, Phys. Rev. B, 63, 054416, 10.1103/PhysRevB.63.054416

2001, Phys. Rev. B, 63, 220403, 10.1103/PhysRevB.63.220403

2004, Nat. Mater., 3, 868, 10.1038/nmat1257

2004, Nat. Mater., 3, 862, 10.1038/nmat1256

2005, Appl. Phys. Lett., 86, 092502, 10.1063/1.1871344

2008, Appl. Phys. Lett., 93, 082508, 10.1063/1.2976435

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Thông tin xuất bản

Japanese Journal of Applied Physics

Tập 52 Số 6R

063003

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