FAR-INFRARED PHOTOCONDUCTIVITY IN HIGH-PURITY EPITAXIAL GaAs

Applied Physics Letters - Tập 13 Số 3 - Trang 83-84 - 1968
G. E. Stillman1, C. M. Wolfe1, I. Melngailis1, Chason Parker1, P. E. Tannenwald1, J. O. Dimmock1
1Lincoln Laboratory Massachusetts Institute of Technology Lexington, Massachusetts 02173

Tóm tắt

Extrinsic far-infrared photoconductivity has been observed at 4.2°K in high-purity n-type epitaxial layers of GaAs grown on Cr-doped semi-insulating GaAs substrates. Measurements of the responsivity and noise in the detection system at 300 Hz in a 1-Hz bandwidth yield an NEP of 1.2 × 10−11 W at 195 μ, 1.4 × 10−12 W at 337 μ and 6 × 10−11 W at 902 μ. The time constant of the detector has been determined to be shorter than 1 μsec using a Ge avalanche modulator to chop the incident radiation. A time constant of about 5 nsec has been measured using impact impurity ionization in the GaAs.

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Tài liệu tham khảo

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Thông tin xuất bản

Applied Physics Letters

Tập 13 Số 3

83-84

Thông tin tác giả