Epitaxial growth of transparent p-type conducting CuGaO2 thin films on sapphire (001) substrates by pulsed laser deposition

Journal of Applied Physics - Tập 89 Số 3 - Trang 1790-1793 - 2001
Kazushige Ueda1, Teizo HASE1, Hiroshi Yanagi1, Hiroshi Kawazoe1, Hideo Hosono1, Hiromichi Ohta2, Masahiro Orita2, Masahiro Hirano2
1Materials and Research Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, 226-8503, Japan
2Hosono Project of Transparent ElectroActive Materials, ERATO, Japan Science and Technology Corporation, 3-2-1, Sakato, Takatsu, Kawasaki, 213-0012, Japan

Tóm tắt

Transparent p-type conducting CuGaO2 thin films were prepared on α-Al2O3 (001) single-crystal substrates by pulsed laser deposition. The films were grown epitaxially on the substrates in an as-deposited state. X-ray pole figure analysis revealed that the films were composed of two types of epitaxial grains, both with c axes oriented perpendicular to the surface and a axes rotated 60° with respect to each other around the c axis. Observation of the CuGaO2 thin films by atomic force microscopy and high-resolution transmission electron microscopy substantiated this conclusion. The films have high optical transparency (∼80%) in the visible region, and the energy gap of CuGaO2 for direct allowed transition was estimated to be 3.6 eV. p-type conductivity was confirmed by Seebeck and Hall measurements. The electrical conductivity, carrier (positive hole) density, and Hall mobility of the films at room temperature were 6.3×10−2 S cm−1, 1.7×1018 cm−3, and 0.23 cm2 V−1 s−1, respectively.

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Thông tin
Thông tin xuất bản

Journal of Applied Physics

Tập 89 Số 3

1790-1793

Thông tin tác giả