Epitaxial growth of a silicene sheet

Applied Physics Letters - Tập 97 Số 22 - 2010
B. Lalmi1, Hamid Oughaddou2,3, Hanna Enriquez2,4, Abdelkader Kara5,3, S. Vizzini6, B. Ealet1, B. Aufray1
1CINaM-CNRS 1 , Campus de Luminy, Case 913, Marseille 13288, France
2DSM-IRAMIS-SPCSI 2 CEA, , Bât. 462, Saclay, Gif-sur-Yvette 91191, France
3Université de Cergy-Pontoise 3 Département de Physique, , Cergy-Pontoise 95000, France
4Université Paris-Sud 4 Département de Physique, , Orsay Cedex 91405, France
5University of Central Florida 5 Department of Physics, , Orlando, Florida 32816, USA
6Aix-Marseille Université 6 IM2NP, Faculté des Sciences de Saint-Jérôme, , Case 142, Marseille 13397, France

Tóm tắt

Using atomic resolved scanning tunneling microscopy, we present here the experimental evidence of a silicene sheet (graphenelike structure) epitaxially grown on a close-packed silver surface [Ag(111)]. This has been achieved via direct condensation of a silicon atomic flux onto the single-crystal substrate in ultrahigh vacuum conditions. A highly ordered silicon structure, arranged within a honeycomb lattice, is synthesized and present two silicon sublattices occupying positions at different heights (0.02 nm) indicating possible sp2-sp3 hybridizations.

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Tài liệu tham khảo

2007, Nature Mater., 6, 183, 10.1038/nmat1849

2000, Phys. Rev. B, 61, 9994, 10.1103/PhysRevB.61.9994

2009, Phys. Rev. B, 79, 115409, 10.1103/PhysRevB.79.115409

2009, Phys. Rev. Lett., 102, 236804, 10.1103/PhysRevLett.102.236804

2005, Appl. Phys. Lett., 86, 231901, 10.1063/1.1943497

2006, Jpn. J. Appl. Phys., Part 2, 45, L837, 10.1143/JJAP.45.L837

2006, Angew. Chem., 118, 6451, 10.1002/ange.200600321

2007, Surf. Sci., 601, 262, 10.1016/j.susc.2006.09.030

2005, Surf. Sci., 574, L9, 10.1016/j.susc.2004.10.052

2009, Appl. Surf. Sci., 256, 524, 10.1016/j.apsusc.2009.07.114

2009, J. Supercond. Novel Magn., 22, 259, 10.1007/s10948-008-0427-8

2008, Nano Lett., 8, 2299, 10.1021/nl800994s

2010, Appl. Phys. Lett., 96, 183102, 10.1063/1.3419932

2010, J. Phys.: Condens. Matter, 22, 045004, 10.1088/0953-8984/22/4/045004

2010, Appl. Phys. Lett., 96, 261905, 10.1063/1.3459143

2009, Phys. Rev. B, 80, 085430, 10.1103/PhysRevB.80.085430

2009, Phys. Rev. B, 80, 245411, 10.1103/PhysRevB.80.245411

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Applied Physics Letters

Tập 97 Số 22

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