Enhanced catalytic activity of ultra-thin CuO islands on SnO/sub 2/ films for fast response H/sub 2/S gas sensors

SENSORS, 2002 IEEE - Tập 1 - Trang 430-434 vol.1
A. Chowdhuri1, V. Gupta1, K. Sreenivas1
1Department of Physics and Astrophysics, University of Delhi, New Delhi, India

Tóm tắt

Trace level detection of H/sub 2/S is of immense interest in diverse fields ranging from gas and oil exploration to dentistry. In the present work 0.12 /spl mu/m thick sputtered SnO/sub 2/ films, and a novel SnO/sub 2/-CuO bilayer structure consisting of ultra thin (/spl sim/10 nm) CuO dotted islands (0.6 mm diameter) are investigated for H/sub 2/S gas sensing. With the SnO/sub 2/-CuO-dotted sensor, a high sensitivity of 7.3/spl times/10/sup 3/ at a low operating temperature of 150/spl deg/C is obtained with a fast response time of 14 seconds for 20 ppm of H/sub 2/S gas and a recovery time of 118 seconds under flowing air have been measured. The electronic and chemical interactions of the CuO catalyst layer on SnO/sub 2/ in the presence of H/sub 2/S have been analyzed in the light of space charge regions formed due to distributed p-type CuO islands on the n-type SnO/sub 2/ thin film surface. Dissociated hydrogen available from the CuO-H/sub 2/S interaction spills over and is found to be primarily responsible for the observed fast response characteristics.

Từ khóa

#Temperature sensors #Chemical analysis #Petroleum #Dentistry #Gas detectors #Delay #Time measurement #Space charge #Transistors #Hydrogen

Tài liệu tham khảo

10.1143/JJAP.34.L455 liu, 1997, Thin Solid Films, 304, 10.1016/S0040-6090(97)00107-7 tong, 2000, Vacuum 59, 877 egashira, 1988, Sens Act, 14 latimer, 1951, Reference book of Inorganic Chemistry manorama, 1994, Appl Phys Lett, 64, 10.1063/1.111326 tamaki, 1992, Sens and Act B, 9, 10.1016/0925-4005(92)80216-K morrison, 1987, Sens Act, 12 bond, 1983, Spillover of adsorbed species, Proc of Int Symp kramer, 1979, 58 maekawa, 1991, Chem Lett, 575 tamaki, 1998, Sens Act B, 49, 10.1016/S0925-4005(98)00144-0 lantto, 1991, Sens Act B, 4, 10.1016/0925-4005(91)80150-I kanefusa, 1988, IEEE Trans Elect Devices 35, 65 vasiliev, 1999, Mater Sci Eng B, 57, 10.1016/S0921-5107(98)00432-2 jianping, 2000, Sens Act B, 65, 10.1016/S0925-4005(99)00406-2 rumyantseva, 1996, Mater Sci Engg B 41, 228 ihokura, 1994, The Stannic oxide gas sensor, Principles and Applications maekawa, 1994, J Mater Chem, 4, 10.1039/JM9940401259