Electrochemical Deposition of Te and Se on Flat TiO2for Solar Cell Application

International Journal of Photoenergy - Tập 2014 - Trang 1-5 - 2014
Seigo Ito1, Noriyuki Kitagawa1, Takahiro Shibahara1, Hitoshi Nishino2
1Department of Electric Engineering and Computer Sciences, Graduate School of Engineering, University of Hyogo, Shosha 2167, Himeji, Hyogo 671-2280, Japan
2Energy Technology Laboratories, Osaka Gas Co., Ltd., 6-19-9 Torishima, Konohana-ku, Osaka 554-0051, Japan

Tóm tắt

Te and Se layers were deposited on〈glass/FTO/flat-TiO2〉by electrochemical deposition. The Te-Se-stacked layer was annealed at 200°C, and then, the migration of Te into the Se layer by annealing was confirmed using auger electron spectroscopy (AES), which was performed by Te doping on the Se layer. Au back contact was coated by vacuum deposition on the Te-doped Se layer, resulting in superstrate-structured solar cells of〈glass/FTO/flat-TiO2/Se-doped Te/Au〉with a 0.50 V open-circuit voltage, 6.4 mA/cm2photocurrent density, 0.36 fill factor, and 1.17% conversion efficiency.

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Tài liệu tham khảo

2014

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International Journal of Photoenergy

Tập 2014

1-5

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