Electrically programmable fuse (eFUSE) using electromigration in silicides

IEEE Electron Device Letters - Tập 23 Số 9 - Trang 523-525 - 2002
C. Kothandaraman1, S.K. Iyer2, S.S. Iyer2
1Infineon Technologies Corporation, Hopewell Junction, NY, USA
2Semiconductor Research and Development Centre, IBM Microelectronics, Hopewell Junction, NY, USA

Tóm tắt

For the first time we describe a positive application of electromigration, as an electrically programmable fuse device (eFUSE). Upon programming, eFUSE's show a large increase in resistance that enable easy sensing. The transient device characteristics show that the eFUSE stays in a low resistance state during programming due to the local heating of the fuse link. The programming is enhanced by a device design that uses a large cathode which increases the temperature gradient and minimizes the effect of microstructural variations.

Từ khóa

#Fuses #Electromigration #Silicides #Cathodes #CMOS technology #Electric resistance #Microelectronics #Integrated circuit interconnections #Contacts #Laser transitions

Tài liệu tham khảo

10.1063/1.335366 10.1016/0927-796X(95)00186-7 10.1109/IEDM.1997.650515 10.1103/PhysRevLett.76.2346