Electrical isolation of Al/sub x/Ga/sub 1-x/As by proton irradiation
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - Trang 447-450
Tóm tắt
The evolution of sheet resistance (R/sub s/) of n-type and p-type conductive Al/sub x/Ga/sub 1-x/As layers (x=0.3, 0.6 and 1.0) during proton irradiation was investigated. The threshold dose (D/sub th/) to convert a conductive layer to a highly resistive one is slightly different for n- and p-type samples with similar initial free carrier concentration and does not depend on the Al content. The thermal stability of the isolation, i.e. the temperature range for which the R/sub s/ is maintained at /spl ap/10/sup 9/ /spl Omega//sq, was found to be dependent on the ratio of the carrier trap concentration to the original carrier concentration. The thermal stability of isolated p-type samples is limited to temperatures lower than 450/spl deg/C. The temperature of /spl ap/600/spl deg/C is the upper limit for the n-type samples thermostability.
Từ khóa
#Protons #Gallium arsenide #Doping #Resistors #Atmospheric measurements #Current density #Electrical resistance measurement #Rapid thermal annealing #Temperature #Ion beamsTài liệu tham khảo
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