Electrical characteristics of stressing for silicon oxynitride thin film

Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) - Trang 47-50
P.J. Chan1, M.C. Poon1, H. Wong1,2, C.W. Kok1
1Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Hong Kong, China
2Department of Electronic Engineering, City University of Hong Kong, Kowloon Tong, Hong Kong, China

Tóm tắt

Capacitors using thin oxynitride films as dielectric layer were fabricated. I-V measurements and constant current stressing to the samples of oxynitride capacitors were done. C-V measurements to the samples were also carried out. By applying constant current stressing to the samples, characteristics of oxynitride samples after stressing could be observed. The stressing current to the samples could be thought as continuous usage current to a non-volatile memory device. The results in this paper revealed the effect of the charge trapping of a non-volatile memory device.

Từ khóa

#Electric variables #Silicon #Semiconductor thin films #Dielectric thin films #Capacitors #Dielectric measurements #Nonvolatile memory #Dielectric films #Current measurement #Stress measurement

Tài liệu tham khảo

10.1149/1.2086273 wong, 2001, Dielectric traps in amorphous silicon oxynitride, HKEDM dieter, 1998, Semiconductor Materials and Device Characterization, 391 10.7567/JJAPS.19S1.245 10.1063/1.329266
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Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)

47-50

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