Electrical characteristics of novel hafnium oxide film

Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616) - Trang 51-54
K.L. Ng1, N. Zhan1, M.C. Poon1, C.W. Kok1, M. Chan1, H. Wong1,2
1Department of Electrical and Elecironic Engineering, Hong Kong University of Science and Technology, Hong Kong, China
2Department of Electronic Engineering, City University of Hong Kong, Kowloon Tong, Hong Kong, China

Tóm tắt

Hafnium oxide film grown by the direct sputtering of a hafnium target in oxygen ambient was investigated. XPS results showed that the interface between the hafnium oxide and silicon substrate was bad. The electrical characteristics of hafnium oxide and its interface layer were studied in detail by capacitance-voltage (C-V) and current-voltage (I-V) measurements. It was observed that the interface layer contains charge traps that affected the device operation.

Từ khóa

#Electric variables #Hafnium oxide #Sputtering #Annealing #Dielectric thin films #Silicon #Dielectric substrates #Voltage #Dielectric measurements #Dielectric materials

Tài liệu tham khảo

10.1063/1.1425466 10.1063/1.1361065 10.1109/55.981318 ng, 0, MRS conference spring 2002 10.1063/1.124036 ramanathan, 2002, J Appl Phyi, 91 10.1063/1.1380240
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Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)

51-54

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