Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach

Nanoscale Research Letters - Tập 11 - Trang 1-6 - 2016
L. D’Ortenzi1, R. Monsù1,2, E. Cara1,2, M. Fretto1, S. Kara1,3,4, S. J. Rezvani1,5, L. Boarino1
1Nanoscience and Materials Division, INRiM (Istituto Nazionale di Ricerca Metrologica), Turin, Italy
2Politecnico di Torino, Turin, Italy
3Department of Chemical Engineering, Faculty of Technology, University of Blida 1, Blida, Algeria
4Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique CRTSE, Algiers, Algeria
5Università di Camerino, Camerino, Italy

Tóm tắt

Silicon nanowires fabricated by metal-assisted chemical etching can present low porosity and a rough surface depending on the doping level of the original silicon wafer. In this case, wiring of silicon nanowires may represent a challenging task. We investigated two different approaches to realize the electrical contacts in order to enable electrical measurement on a rough silicon nanowire device: we compared FIB-assisted platinum deposition for the fabrication of electrical contact with EBL technique.

Tài liệu tham khảo

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