Effects of polarisation on solar-blind AlGaN UV photodiodes

COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - Trang 459-462
J.J. Kuek1, D.L. Pulfrey2, B.D. Nener1, J.M. Dell1, G. Parish3, U.K. Mishra3
1Department EEE, University of Western Australia, Crawley, WA, Australia
2Department ECE, University of British Columbia, Vancouver, BC, Canada
3Department ECE, University of California, Santa Barbara, CA, USA

Tóm tắt

The effects of spontaneous and strain induced polarisation, and incomplete dopant ionisation on the spectral responsivity of a Ga-faced p-GaN/i-Al/sub 0.33/Ga/sub 0.67/N/n-GaN photodiode structure are determined using a commercial finite element modelling package. It is shown that polarisation induced interface charges increase the barrier to carriers generated in the GaN regions of the diode, improving the solar-blindness of the diode by more than three orders of magnitude. In contrast, incomplete dopant ionisation has only a minor effect.

Từ khóa

#Polarization #Aluminum gallium nitride #Photodiodes #Ionization #Diodes #Capacitive sensors #Finite element methods #Semiconductor process modeling #Packaging #Solar power generation

Tài liệu tham khảo

edgar, 1999, Gallium Nitride and Related Semiconductors 10.1063/1.123960 10.1103/PhysRevB.56.R10024 kuek, 2000, SIMC-XI Proceedings 10.1063/1.126579 10.1002/(SICI)1521-396X(199911)176:1<169::AID-PSSA169>3.3.CO;2-Y 10.1063/1.126940 pankove, 1971, Optical Processes in Semiconductors 10.1063/1.369664 0 10.1063/1.366114 10.1063/1.126962
Thông tin
Thông tin xuất bản

COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices

459-462

Thông tin tác giả