Effects of localized contamination with copper in MOSFETs
Tóm tắt
Using a relatively large size MOSFET (W/L= 15/15 μm), we investigated the degradation of MOSFET characteristics due to localized copper contamination. In order to contaminate a part of the active region of MOSFET, silicon nitride (Si3N4) over the active region, which is known to be a protective film against copper, was etched by reactive ion etching (RIE). As the area of localized copper contamination is about 3-4 μm or above, apart from the edge of the gate electrode, no degradation was observed after thermal treatment at 450/spl deg/C for 2 h in N2 ambient, based on the result of the increase in interface trap density (/spl Delta/D/sub it/).
Từ khóa
#Contamination #Copper #MOSFETs #Etching #Silicon #Protection #Semiconductor films #Electrodes #Integrated circuit interconnections #ElectromigrationTài liệu tham khảo
nishida, 2001, soc cmos technology for nbti/hci immune i/o and analog circuits implementing surface and buried channel structure, IEDM Tech Dig, 869
ohguro, 2001, a study of analog characteristics of cmos with heavily nitrided no oxynitrides, VLSI Tech Dig, 91
10.1109/VLSIT.2000.852755
10.1063/1.1415350
10.1016/S0167-9317(00)00462-7
10.1109/EDL.1984.25829
chen, 1982, design and fabrication of p-channel fet for 1-<formula><tex>$\mu$</tex></formula>m cmos technology, IEDM Tech Dig, 710
10.1063/1.332324
woo, 1998, a high performance 3.97 <formula><tex> $\mu$</tex></formula>m<formula><tex>$^{2}$</tex></formula> cmos sram technology using self-aligned local interconnect and copper interconnect metallization, VLSI Tech Dig, 12
10.1063/1.104431
10.1109/IITC.1999.787079
su, 1998, a high-performance sub-0.25 <formula><tex>$\mu$</tex></formula>m cmos technology with multiple thresholds and copper interconnects, VLSI Tech Dig, 18
10.1016/S0026-2714(00)00148-7
10.1109/IITC.1999.787096
awaya, 1989, selective chemical vapor deposition of copper, VLSI Tech Dig, 103
10.1063/1.107370
torres, 1999, cu dual damascence for advanced metallization, IEEE Interconnect Technology Conf, 253