Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs
Tóm tắt
The low temperature (100/spl deg/C) deposition of Sc2O3 or MgO layers is found to significantly increase the output power of AlGaN/GaN HEMTs. At 4 GHz, there was a better than 3 dB increase in output power of 0.5×100 μm2 HEMTs for both types of oxide passivation layers. Both Sc2O3 and MgO produced larger output power increases at 4 GHz than conventional plasma-enhanced chemical vapor deposited (PECVD) SiN/sub x/ passivation which typically showed /spl les/2 dB increase on the same types of devices. The HEMT gain also in general remained linear over a wider input power range with the Sc2O3 or MgO passivation. These films appear promising for reducing the effects of surface states on the DC and RF performance of AlGaN/GaN HEMTs.
Từ khóa
#HEMTs #MODFETs #Power generation #Passivation #Aluminum gallium nitride #Gallium nitride #Plasma temperature #Plasma chemistry #Plasma devices #ChemicalsTài liệu tham khảo
10.1109/16.906451
10.1016/S0038-1101(02)00089-8
kikkawa, 2001, surface-charged controlled algan/gan power hfet without current collapse and <formula><tex>$g_{m}$</tex></formula> dispersion, IEDM Tech Dig, 585
10.1063/1.1412591
10.1063/1.1412282
10.1063/1.1455692
10.1016/S0038-1101(01)00314-8
10.1049/el:19990957
10.1109/16.906437
10.1049/el:20010100
10.1063/1.1418452
10.1557/PROC-572-541
10.1049/el:19990697
10.1109/16.906439
10.1109/55.843146
10.1109/16.906429