Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition

Materials - Tập 9 Số 8 - Trang 695
Jingjin Wu1, Yinchao Zhao1, Ce Zhou Zhao2, Li Yang3, Qifeng Lu1, Qian Zhang3, Jeremy S. Smith1, Yongming Zhao4,5
1Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ, UK
2Department of Electrical and Electronic Engineering, Xi’an Jiaotong-Liverpool University, Suzhou, 215123, China
3Department of Chemistry, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China
4Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou, 215123, China
5University of Chinese Academy of Sciences, Beijing, 100049, China

Tóm tắt

The 4 at. % zirconium-doped zinc oxide (ZnO:Zr) films grown by atomic layer deposition (ALD) were annealed at various temperatures ranging from 350 to 950 °C. The structural, electrical, and optical properties of rapid thermal annealing (RTA) treated ZnO:Zr films have been evaluated to find out the stability limit. It was found that the grain size increased at 350 °C and decreased between 350 and 850 °C, while creeping up again at 850 °C. UV–vis characterization shows that the optical band gap shifts towards larger wavelengths. The Hall measurement shows that the resistivity almost keeps constant at low annealing temperatures, and increases rapidly after treatment at 750 °C due to the effect of both the carrier concentration and the Hall mobility. The best annealing temperature is found in the range of 350–550 °C. The ZnO:Zr film-coated glass substrates show good optical and electrical performance up to 550 °C during superstrate thin film solar cell deposition.

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Materials

Tập 9 Số 8

695

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