Effects of Nb concentration on photo-electrical properties of Sr/sub 1-x/La/sub x/Nb/sub y/Ti/sub 1-y/O/sub 3/ thin-film resistor

Bin Li1, P.T. Lai2, M.Q. Huang1, G.Q. Li1
1Department of Applied Physics, South China University of Technology, Guangzhou, China
2Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong, China

Tóm tắt

Strontium lanthanum titanate-niobate (SrLaNb/sub x/Ti/sub 1-x/O/sub 3/) thin-film resistors are fabricated on SiO/sub 2//Si substrates by an argon ion-beam sputtering technique. Measurements show that the thin-film resistor has superior sensitivity for visible light. Moreover, the effects of Nb concentration on the photo-electrical properties of Sr/sub 1-x/La/sub x/Nb/sub y/Ti/sub 1-y/O/sub 3/ thin-film resistors and frequency effects on the photosensitivity performance are extensively investigated.

Từ khóa

#Niobium #Strontium #Sputtering #Resistors #Lanthanum #Titanium compounds #Semiconductor thin films #Substrates #Argon #Transistors

Tài liệu tham khảo

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