Effective Injection of Spins from a Ferromagnetic Metal to the InSb Semiconductor

Pleiades Publishing Ltd - Tập 110 - Trang 273-278 - 2019
N. A. Viglin1, V. M. Tsvelikhovskaya1, N. A. Kulesh2, T. N. Pavlov1
1Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, Yekaterinburg, Russia
2Ural Federal University, Yekaterinburg, Russia

Tóm tắt

Conditions for the fabrication of lateral semiconductor spin devices with a high efficiency of spin injection have been revealed. Technological aspects of the formation of magnetic elements of a spin device, its electric contacts, and a thin MgO dielectric layer necessary for the efficient injection of spin-polarized electrons have been considered in detail. The degree of polarization of electrons for InSb about 25% has been obtained for the first time.

Tài liệu tham khảo

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