Effect of wet-chemical substrate smoothing on passivation of ultrathin-SiO2/n-Si(111) interfaces prepared with atomic oxygen at thermal impact energies
Tóm tắt
Ultrathin SiO2 layers for potential applications in nano-scale electronic and photovoltaic devises were prepared by exposure to thermalized atomic oxygen under UHV conditions. Wet-chemical substrate pretreatment, layer deposition and annealing processes were applied to improve the electronic Si/SiO2 interface properties. This favourable effect of optimized wet-chemical pre-treatment can be preserved during the subsequent oxidation. The corresponding atomic-scale analysis of the electronic interface states after substrate pre-treatment and the subsequent silicon oxide layer formation is performed by field-modulated surface photovoltage (SPV), atomic force microscopy (AFM) and spectroscopic ellipsometry in the ultraviolet and visible region (UV-VIS-SE).
Tài liệu tham khảo
B. Stegemann, A. Schoepke, D. Sixtensson, B. Gorka, T. Lussky, M. Schmidt, Physica E 41, 1019 (2009)
B. Stegemann, D. Sixtensson, T. Lussky, A. Schoepke, I. Didschuns, B. Rech, M. Schmidt, Nanotechnology 19, 424020 (2008)
S. Schaefer et al., Solid State Sci. 10, 1314e1321 (2008)
B. Stegemann, A. Schoepke, M. Schmidt, J. Non-Cryst. Solids 354, 2100 (2008)
T. M. Buck and F. S. McKim, J. Electrochem. Soc. 105, 709 (1958)
T. Ohmi, M. Miyashita, M. Itano, T. Imaoka, I. Kawanabe, IEEE Trans. Electron Devices 39, 537 (1992)
P. O. Hahn and M. Hezler, J. Vac Sci. Technol. A2, 574 (1984)
B. J. Mrstik, V. V. Afanas’ev, A. Stesmans, P. J. Mcmarr, R. K. Lawrence, J. Appl. Phys. 85, 6577 (1999)
T. Aoyama, T. Yamazaki, T. Ito, J. Electrochem. Soc. 143, 2280 (1996)
L. Lai, K. J. Hebert, E. A. Irene, J. Vac. Sci. Technol. B 17, 53 (1999)
P. Drummond, A. Kshirsagar, J. Ruzyllo, Solid State Electron. 55, 29 (2010)
Y.A. Chabal, G. S. Higashi, K. Raghavachari, V. A. Burrows, J. Vac. Sci. Technol. A 7, 2104 (1989)
H. Angermann, Appl. Surf. Sci. 254, 8067 (2008)
E. Pincik et al., Appl. Surf. Sci. 256,19, 5757 (2010)
W.-B. Kim, T. Matsomoto, H. Kobayashi, Appl. Phys. Lett. 93, 072101 (2008)
J.-P. Becker, D. Pysch, A. Leimstoll, M. Hermle, S. W. Glunz, Proceedings of the 24th European PV Solar Energy Conference and Exhibition, 21–25. Sept. 2009, Hamburg, Germany, (Hamburg, 2009)
H. F. Okorn-Schmidt, IBM J. Res. Develop. 43, 315 (1999)
H. Noguchi, S. Adachi, Appl. Sur. Sci. 246, 139 (2005)
M. Grundner, R. Schulz, Conference Proceedings No. 167, (American Vacuum Soc. 1988) 329
K. Heilig, Experimentelle Technik der Physik 14, 135 (1968)
Th. Dittrich, Th. Bitzer, H. Angermann, H. J. Lewerenz, H. Flietner, J. Electrochem. Soc. 141 3595 (1994)
H. Angermann, Anal. Bioanal. Chem. 374, 676 (2002)
W. Kern, J. Electrochem. Soc. 137, 1987(1990)
W. Henrion, M. Rebien, H. Angermann, A. Röseler, Appl. Surf. Sci. 202, 199 (2002)
B. Stegemann, D. Sixtensson, T. Lussky, U. Bloeck, M. Schmidt, Chimia 61, 826 (2007)
A. Sarikov, B. Stegemann, M. Schmidt, Thin Solid Films 518, 4662 (2010)
E. Pinčík, H. Kobayashi, J. Rusnák, M. Takahashi, R. Brunner, M. Jergel, A. Morales-Acevedo, L. Ortega, J. Kákoš, Appl. Surf. Sci. 252, 7713 (2006).
J. Mizsei, Solid State Electron. 46, 235 (2002)
K. Heilig, Solid State Electron. 27, 395 (1984)
Y. W. Lam, Phys. Rev. D: Appl. Phys. 4, 1370 (1971)
W. Henrion, A. Röseler, H. Angermann, M. Rebien, Phys. Stat. Sol. (a) 175, 121 (1999)
H. Angermann, W. Henrion, M. Rebien, A. Röseler, Appl. Surf. Sci. 235, 322 (2004)
H. Angermann, L. Korte, J. Rappich, E. Conrad, I. Sieber, M. Schmidt, K. Hübener, J. Hauschild, Thin Solid Films 516, 6775 (2008)
P. Allongue, C. H. Villeneuve, S. Morin, R. Boukherroub, D.D.M. Wayner, Electrochim. Acta 45, 4591 (2000)
H. Angermann, J. Rappich, C. Klimm, Cent. Eur. J. Phys. 7, 363 (2009)
A. Laades, Preparation and Characterization of Amorphous/Crystalline Silicon Heterojunctions, PhD Thesis, Technische Universität Berlin, (Berlin, Germany, 2005).
A. Goetzberger, V. Heine, E. H. Nicollian, Appl. Phys. Lett. 12, 95 (1968)
E.H. Pointdexter, G.J. Geraldi, M.E. Rueckel, P.J. Caplan, N.M. Johnsohn, D.K. Biegelsen, J. Appl. Phys. 56, 2844 (1984)
H. Flietner, Mat. Sci. Forum 185, 73 (1995)
P. M. Lenahan and P. V. Dressendorfer, J. Appl. Phys. 55, 3495 (1984)
E. H. Pointdexter, P.J. Caplan, B.E. Deal, and R.R. Radzouk, J. Appl. Phys. 52, 879 (1981)
K. Ohishi and T. Hattori, Jpn. J. Appl. Phys. 33, L675 (1994)